產(chǎn)品分類
PECVD 臥式
所屬分類：
第一代半導(dǎo)體工藝設(shè)備
概要：
? PECVD主要應(yīng)用于氧化硅(SiO?) 和氮化硅(SiN4) 材料的薄膜生長，工作原理是在低壓引入高頻射頻電源，采取電容耦合方式使工藝氣體電離放電，形成等離子體狀態(tài)，產(chǎn)生大量的活性基團(tuán)，這些活性基團(tuán)在襯底材料表面發(fā)生化學(xué)反應(yīng)并沉積到襯底表面，生長出氧化硅(SiO?) 或氮化硅(SiN4) 薄膜
關(guān)鍵詞：
PECVD (立式/臥式)
PECVD 臥式
產(chǎn)品概述/Product Introduction：
♦ PECVD主要應(yīng)用于氧化硅(SiO?) 和氮化硅(SiN4) 材料的薄膜生長，工作原理是在低壓引入高頻射頻電源，采取電容耦合方式使工藝氣體電離放電，形成等離子體狀態(tài)，產(chǎn)生大量的活性基團(tuán)，這些活性基團(tuán)在襯底材料表面發(fā)生化學(xué)反應(yīng)并沉積到襯底表面，生長出氧化硅(SiO?) 或氮化硅(SiN4) 薄膜
PECVD is mainly used for thin film growth of silicon oxide (SiO?) and silicon nitride (SiN4) materials, The working principle is to introduce a high-frequency RF power supply at low voltage, ionize and discharge the process gas by capacitive coupling, and form a plasma state, which produces a large number of active groups. These active groups react chemically on the surface of the substrate material and depos- it on the bottom surface of the village, and grow silicon oxide (SiO?) or silicon nitride (SiN4) thin films.
產(chǎn)品特點(diǎn)/Product Characteristics：
♦ 成膜質(zhì)量高
High film quality
♦ 體積小占地面積小，操作簡便
Small volume, small floor area and simple operation
♦ 具有良好的工藝性能，使用范圍廣泛
Has good process performance and wide application range
技術(shù)指標(biāo)/Technical Indicators：
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晶片尺寸:最大8英寸 Wafer size: Max. 8 inches |
溫度:50°C-900°C Temperature: 50°C-900°C |
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真空系統(tǒng):干泵+分子泵 Vacuum system: dry pump + molecular pump |
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應(yīng)用范圍/Scope：
♦ 應(yīng)用于半導(dǎo)體器件、電力電子器件、光電子等行業(yè)氧化硅(SiO?) 或氮化硅(SiO?) 薄膜的制備
It can be used to prepare silicon oxide (SiO?) or silicon nitride (SiO?) thin films in semiconductor de- vices, power electronic devices, optoelectronics and other industries
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氧化/擴(kuò)散合金爐管設(shè)備
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